عنوان ترجمه فایل فارسی: مباحث جدید زیرآستانه ای در فناوری نیمه هادى اکسید فلزى تکمیلى ۶۵ نانومتری.
عنوان نسخه انگلیسی: New Subthreshold Concepts in 65nm CMOS Technology
مرتبط با رشته های : برق و الکترونیک
تعداد صفحات مقاله فارسی: ۱۶ صفحه
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قسمتی از متن انگلیسی:
۱٫ Introduction
In the last few years, large efforts have
been made in research and development on low energy circuits for battery
operated wireless sensor nodes. Recently a number of papers reporting
ADC’s utilizing time-domain instead of amplitude domain have been
reported [1]-[4]. This class of converters may be built entirely of
digital components, but this would put strict requirements on the
comparator and sampling circuitry. To meet these requirements low power
and high speed flip-flops with a sufficiently low possibility for
metastability must be designed. Recently, as we approach atomic scale
devices, leakage currents have increased dramatically, leading to higher
static power dissipation. Therefore, leakage must be taken into
consideration when evaluating these circuits since it has become a
significant contributor to the overall power consumption in
deepsubmicron CMOS processes
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